fjd3305h1 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com fjd3305h1 rev. a1 1 april 2012 fjd3305h1 npn silicon transistor features ? high voltage switch mode application ? fast speed switching ? wide safe operating area ? suitable for electronic ballast application ? wave soldering absolute maximum ratings* t c = 25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics t a = 25 c unless otherwise noted * device mounted on minimum pad size ordering information symbol parameter value units v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current (dc) 4 a i cp collector current (pulse) 8 a i b base current 2 a p c collector dissipation, t a = 25 c t c = 25 c 1.1 50 w w t j junction temperature 150 c t stg storage temperature -65 to 150 c symbol parameter value units r ja thermal resistance, junction to ambient 110 c/w r j c thermal resistance, junction to case 2.0 c/w part number marking package packing method remarks fjd3305h1tm j3305h1 d-pak tape & reel 1. base 2. collector 3. emitter 1 dpak
fjd3305h1 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com fjd3305h1 rev. a1 2 electrical characteristics* t c = 25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter conditions min. typ. max. units bv cbo collector-base breakdwon voltage i c = 500 a, i e = 0 700 v bv ceo collector-emitter breakdown voltage i c = 5ma, i b = 0 400 v bv ebo emitter-base breakdown voltage i e = 500 a, i c = 0 9 v i cbo collector cut-off current v cb = 700v, i e = 0 1 a i ebo emitter cut-off current v eb = 9v, i c = 0 1 a h fe1 h fe2 dc current gain * v ce = 5v, i c = 1a v ce = 5v, i c = 2a 19 8 28 40 v ce(sat) collector-emitter saturation voltage i c = 1a, i b = 0.2a i c = 2a, i b = 0.5a i c = 4a, i b = 1a 0.5 0.6 1.0 v v v v be(sat) base-emitter saturation voltage i c = 1a, i b = 0.2a i c = 2a, i b = 0.5a 1.2 1.6 v v f t current gain bandwidth product v ce = 10v, i c = 0.5a 4 mhz c ob output capacitance v cb = 10v, f = 1mhz 65 pf t on turn on time v cc = 125v, i c = 2a i b1 = -i b2 = 0.4a r l = 62.5 0.8 s t stg storage time 4.0 s t f fall time 0.9 s
fjd3305h1 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com fjd3305h1 rev. a1 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector- emitter saturation voltage figure 4. base - emittersaturation voltage figure 5. switching time figure 6. capacitance 012345678910 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i b = 150ma i b = 200ma i b = 300ma i b = 250ma i b = 100ma i b = 50ma i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 1 10 100 v ce = 5v ta = 125 o c ta = 75 o c ta = 25 o c ta = - 25 o c h fe , dc current gain i c [a], collector cutrrent 0.01 0.1 1 10 0.01 0.1 1 10 i c = 4 i b ta = 75 o c ta = 125 o c ta = 25 o c ta = - 25 o c v ce (sat) [v], saturation voltage i c [a], collector current 0.01 0.1 1 10 0.1 1 10 i c = 4 i b ta = 75 o c ta = 125 o c ta = 25 o c ta = - 25 o c v be (sat) [v], saturation voltage i c [a], collector current 1 100 1000 ta = 125 o c ta = 25 o c i b1 = - i b2 = 0.4a v cc = 125v t stg t f t f & t stg [ s], switching time i c [a], collector current 1 10 100 1 10 100 1000 10000 f=1mhz c ob c ib capacitance[pf] reverse voltage[v]
fjd3305h1 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com fjd3305h1 rev. a1 4 typical performance characteristics (continued) figure 7. reverse biased safe operating area figure 8. collector- emitter saturation voltage at rbsoa figure 9. input pulse width vs correct current at rbsoa figure 10. power derating figure 11. rbsoa test circuit 0 2 4 6 8 10 0 100 200 300 400 500 600 700 800 v be(off) =-5v v be(off) =-7v v be(off) =-9v v be(off) =-3v v cc =50v, l c =1mh v be(off) =-5v, i b2 =-1.0a r bb =0.7 ohms i c /i b =5 v ce [v], collector-emitter voltage i c [a], collector current 12345678 0 2 4 6 8 10 ic/ib = 3 ic/ib = 4 v cc =50v, l c =1mh v be(off) =-5v, i b2 =-1.0a r bb =0.7 ohms ic/ib = 5 v ce (sat) [v], saturation voltage i c [a], collector current 12345678 0 40 80 120 160 200 ic/ib = 3 ic/ib = 4 v cc =50v, l c =1mh v be(off) =-5v, i b2 =-1.0a r bb =0.7 ohms ic/ib = 5 turn-on pw [us] i c [a], collector current 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 p c [w], power dissipation tc[ o c], case temperature
fjd3305h1 ? npn silicon transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com fjd3305h1 rev. a1 5 physical dimensions d-pak dimensions in millimeters
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